TIP102_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL TRANSISTOR

TIP102
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_C=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
TO-220
Collector Power Dissipation
TO-252
SYMBOL
VCBO
VCEO
VEBO
I_C
I_CP
I_B
PC
RATINGS
100
100
5
8
15
1
80
41
UNIT
V
V
V
A
A
A
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-65~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
V_CEO(SUS)
ICBO
ICEO
IEBO
hFE1
hFE2
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter ON Voltage
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
V_BE(ON)
COB
TEST CONDITIONS
I_C=30mA, I_B=0A
V_CB=100V, I_E=0A
V_CE=50V, I_B=0A
V_EB=5V, I_C=0A
V_CE=4V, I_C=3A
V_CE=4V, I_C=8A
I_C=3A, I_B=6mA
I_C=8A, I_B=80mA
V_CE=4V, I_C=8A
V_CB=10V, I_E=0A, f=0.1MHZ
MIN TYP MAX UNIT
100
V
50 ^µA
50 ^µA
2 ^mA
1000
200
20000
2V
2.5 ^V
2.8 ^V
300 ^pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-025.B