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TIP102 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |||
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TIP102
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
Pulse
ICP
Base Current
DC
IB
Collector Power Dissipation
PC
8
A
15
A
1
A
80
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
SYMBOL
VCEO(SUS)
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(SAT)
Base-Emitter ON Voltage
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
VBE(ON)
COB
TEST CONDITIONS
IC=30mA, IB=0A
VCB=100V, IE=0A
VCE=50V, IB=0A
VEB=5V, IC=0A
VCE=4V, IC=3A
VCE=4V, IC=8A
IC=3A, IB=6mA
IC=8A, IB=80mA
VCE=4V, IC=8A
VCB=10V, IE=0A, f=0.1MHZ
MIN TYP MAX UNIT
100
V
50 µA
50 µA
2 mA
1000
200
20000
2V
2.5 V
2.8 V
300 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-025.A
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