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| TC200 Datasheet, PDF (2/3 Pages) Unisonic Technologies – EPITAXIAL PLANAR NPN TRANSISTOR | |||
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TC200
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Emitter Current
IE
-500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
 CLASSIFICATION OF hFE1
SYMBOL
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE
fT
Cob
TEST CONDITIONS
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=100mA, IB=10mA
VCE=2V, IC=200mA
VCE=6V, IC=20mA
VCB=6V, IE=0, f=1MHz
MIN TYP MAX UNIT
0.1 µA
0.1 µA
70
240
25
0.25 V
1.0 V
300
MHz
7.0
pF
RANK
hFE1
O
70 ~ 140
Y
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-087.a
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