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| STD888 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR | |||
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STD888
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
-60
V
Collector-Emitter Voltage (IB=0)
VCEO
-30
V
Emitter-Base Voltage (IC=0)
VEBO
-6
V
Collector Current
IC
-5
A
Collector Peak Current (tp<5ms)
ICM
-10
A
Total Dissipation at TC=25°C
PD
15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO
IE=0, IC=-100µA
BVCEO (Note 1) IB=0, IC=-10mA
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVEBO
ICBO
IC=0, IE=-100µA
VCB=-30V, IE=0
Emitter Cut-off Current
IEBO
IC=0, VEB=-6V
IC=-500mA, IB=-5mA
Collector-Emitter Saturation Voltage
VCE(sat)
(Note 1)
IC=-2A, IB=-50mA
IC=-5A, IB=-250mA
IC=-6A, IB=-250mA
IC=-8A, IB=-400mA
Base-Emitter Saturation Voltage
VBE(sat)
(Note 1)
IC=-10A, IB=-500mA
IC=-2A, IB=-50mA
IC=-6A, IB=-250mA
IC=-10mA, VCE=-1V
DC Current Gain
hFE
(Note 1)
IC=-500mA, VCE=-1V
IC=-5A, VCE=-1V
IC=-8A, VCE=-1V
IC=-10A, VCE=-1V
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
IC=-3A, IB1=-IB2=-60mA
tS
VCC=-20V
tF
Note: 1. Pulsed: Pulse duration=300µs, duty cycleâ¤1.5%
MIN TYP MAX UNIT
-60
V
-30
V
-6
V
-10 nA
-10 nA
-0.15 V
-0.25 V
-0.70 V
-0.70 V
-1 V
-1.5 V
-1.1 V
-1.4 V
150 200
150 200 300
75 100
40 55
15 35
180 220 ns
160 210 ns
250 300 ns
80 100 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R209-028.a
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