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| SBL3045C Datasheet, PDF (2/3 Pages) Bruckewell Technology LTD – Low VF Schottky Barrier Rectifier | |||
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SBL3045C
Preliminary
DIODE
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Recurrent Peak Reverse Voltage
RMS Voltage
VRRM
45
V
VRWM
45
V
RMS Reverse Voltage
DC Blocking Voltage
VR(RMS)
32
V
VR
45
V
Average Forward Rectified Current
Per Leg
Per Package
IO
15
30
A
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rated Load Per Diode
IFSM
180
A
Critical Rate of Rise of Reverse Voltage
dV/dt
10000
V/µs
Operating Junction Temperature
Storage Temperature
TJ
150
°C
TSTG
-65~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
dPtot
dTJ
<
1
Rth( jï¼a)
thermal
runaway
condition
for
a
diode
on
its
own
heatsink
ï® THERMAL RESISTANCES
PARAMETER
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
1.60
3.31
ï® ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted.)
UNIT
°C/W
°C/W
°C/W
PARAMETER
SYMBOL TEST CONDITIONS
Reverse Breakdown Voltage (Note 3)
V(BR)R IR=0.50mA
Forward Voltage Drop
VFM
TJ=25°C, IF=15A
TJ=125°C, IF=15A
Leakage Current (Note 3)
IRM
VR=VRM, TJ=25 °C
VR=VRM, TJ=125 °C
Notes: 1. Pulse Test: 380μs pulse width, 2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Short duration pulse test used to minimize self-heating effect.
4. Thermal resistance junction to case mounted on heatsink.
5. Mounted on an FR4 PCB, single-sided copper, with 100 cm2 copper pad area.
MIN TYP MAX UNIT
45
V
0.56 0.62 V
0.57 V
1 mA
75 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-075.c
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