PZTA94 Datasheet, PDF (2/3 Pages) Weitron Technology – High-Voltage PNP Transistor Surface Mount

PZTA94
Preliminary
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
Collector Power Dissipation(TA=25°C)
PD
625
mW
Collector Current
IC
-300
mA
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC=-1mA, IB=0
Collector-Emitter Breakdown Voltage
BVCES IC=-100μA, VBE=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100μA, IC=0
Collector Cut-off Current
ICBO VCB=-300V, IE=0
Collector Cut-off Current
ICES VCE =-400V, VBE=0
Emitter Cut-off Current
IEBO VEB=-4V, IC=0
VCE=-10V, IC=-1mA
DC Current Gain(note)
hFE
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-10mA, IB=-1mA
Output Capacitance
Cob VCB=-20V, IE=0, f=1MHz
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%
MIN TYP MAX UNIT
-400
V
-400
V
-400
V
-5
V
-100 nA
-1 μA
100 nA
60
70
70
300
40
-0.20
-0.5
V
-0.75 V
7 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-026.a