PZTA92_15 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

PZTA92/93
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
PZTA92
PZTA93
V_CBO
-300
-200
V
V
Collector-Emitter Voltage
PZTA92
PZTA93
V_CEO
-300
-200
V
V
Emitter-Base Voltage
Collector Current
V_EBO
I_C
-5
V
-500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BV_CBO I_C=-100μA, I_E=0
PZTA92
PZTA93
Collector-Emitter Breakdown Voltage BV_CEO I_C =-1mA, I_B=0
PZTA92
PZTA93
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BV_EBO
I_CBO
I_EBO
I_E=-100μA, I_C =0
V_CB=-200V, I_E=0
V_CB=-160V, I_E=0
V_EB=-3V, I_C =0
PZTA92
PZTA93
DC Current Gain (Note)
V_CE=-10V, I_C =-1mA
h_FE V_CE=-10V, I_C =-10mA
V_CE=-10V, I_C =-30mA
Collector-Emitter Saturation Voltage V_CE(SAT) I_C =-20mA, I_B=-2mA
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V_BE(SAT) I_C =-20mA, I_B=-2mA
f_T V_CE=-20V,Ic=-10mA, f=100MHz
Collector Base Capacitance
C_CB
V_CB=-20V,
I_E=0,
f=1MHz
PZTA92
PZTA93
Note: Pulse test: P_W<300μs, Duty Cycle<2%, V_{CE (SAT)} <200mV (Class SIN)
MIN
-300
-200
-300
-200
-5
60
80
80
50
TYP
MAX
-0.25
-0.25
-0.10
UNIT
V
V
V
V
V
μA
μA
μA
-0.5
-0.90
6
8
V
V
MHz
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-006.E