PZTA92_12 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR

PZTA92/93
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_A=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
PZTA92
-300
V
Collector-Base Voltage
PZTA93
V_CBO
-200
V
PZTA92
-300
V
Collector-Emitter Voltage
PZTA93
V_CEO
-200
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BV_CBO I_C=-100μA, I_E=0
PZTA92
PZTA93
Collector-Emitter Breakdown Voltage BV_CEO I_C =-1mA, I_B=0
PZTA92
PZTA93
Emitter-Base Breakdown Voltage
BV_EBO I_E=-100μA, I_C =0
Collector Cut-Off Current
I_CBO
V_CB=-200V, I_E=0
V_CB=-160V, I_E=0
PZTA92
PZTA93
Emitter Cut-Off Current
I_EBO V_EB=-3V, I_C =0
V_CE=-10V, I_C =-1mA
DC Current Gain (Note)
h_FE V_CE=-10V, I_C =-10mA
V_CE=-10V, I_C =-30mA
Collector-Emitter Saturation Voltage V_CE(SAT) I_C =-20mA, I_B=-2mA
Base-Emitter Saturation Voltage
V_BE(SAT) I_C =-20mA, I_B=-2mA
Current Gain Bandwidth Product
f_T V_CE=-20V,Ic=-10mA, f=100MHz
Collector Base Capacitance
PZTA92
C_CB V_CB=-20V, I_E=0, f=1MHz _PZTA93
Note: Pulse test: P_W<300μs, Duty Cycle<2%, V_{CE (SAT)} <200mV (Class SIN)
MIN
-300
-200
-300
-200
-5
60
80
80
50
TYP
MAX
-0.25
-0.25
-0.10
UNIT
V
V
V
V
V
μA
μA
μA
-0.5
-0.90
6
8
V
V
MHz
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-006.D