PZTA42_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

PZTA42/43
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (T_A=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
PZTA42
PZTA43
V_CBO
300
V
200
V
Collector-Emitter Voltage
PZTA42
PZTA43
V_CEO
300
V
200
V
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
V_EBO
I_C
Pc
6
V
500
mA
1
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
PZTA42 300
V
Collector-Base Breakdown Voltage BV_CBO I_C =100μA, I_E=0
PZTA43 200
V
PZTA42 300
V
Collector-Emitter Breakdown Voltage BV_CEO I_C =1mA, I_B=0
PZTA43 200
V
Emitter-Base Breakdown Voltage
BV_EBO I_E=100μA, I_C =0
6
V
Collector Cut-Off Current
I_CBO
V_CB=200V, I_E=0
V_CB=160V, I_E=0
PZTA42
PZTA43
100 nA
100 nA
Emitter Cut-Off Current
I_EBO
V_BE=6V, I_C =0
V_BE=4V, I_C =0
PZTA42
PZTA43
100 nA
100 nA
V_CE=10V, I_C =1mA
80
DC Current Gain
h_FE V_CE=10V, I_C =10mA
80
300
V_CE=10V, I_C 30mA
80
Collector-Emitter Saturation Voltage V_CE(SAT) I_C =20mA, I_B=2mA
0.2
V
Base-Emitter Saturation Voltage
V_BE(SAT) I_C =20mA, I_B=2mA
0.90 V
Current Gain Bandwidth Product
f_T V_CE=20V, I_C =10mA, f=100MHz
50
MHz
Collector Base Capacitance
PZTA42
C_CB V_CB=20V, I_E=0, f=1MHz _PZTA43
3
pF
4
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-005.E