PZTA14_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor

PZTA14
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_A=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
30
V
Collector-Emitter Voltage
V_CES
30
V
Emitter-Base Voltage
V_EBO
10
V
Collector Power Dissipation
P_C
1
W
Collector Current
I_C
500
mA
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A =25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Emitter Breakdown Voltage
BV_CES
Collector Cut-Off Current
I_CBO
Emitter Cut-Off Current
I_EBO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(SAT)
Base-Emitter on Voltage
V_BE(ON)
Current Gain Bandwidth Product
f_T
Pulse test: Pulse Width<300μs, Duty Cycle=2%
TEST CONDITIONS
I_C=100μA, I_B=0
V_CB=30V, I_E=0
V_EB=10V, I_C=0
V_CE=5V, I_C=100mA
I_C=100mA, I_B=0.1mA
V_CE=5V, I_C=100mA
V_CE=5V, I_C=10mA, f=100MHz
MIN TYP
30
20000
125
MAX
100
100
1.5
2.0
UNIT
V
nA
nA
V
V
MHz
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-004, D