PZTA06G-AA3-R Datasheet, PDF (2/3 Pages) Unisonic Technologies – AMPLIFIER TRANSISTOR

PZTA06
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
V_CBO
80
V
Collector Emitter Voltage
V_CEO
80
V
Emitter Base Voltage
V_EBO
4
V
Collector Current - Continuous
I_C
500
mA
Total Device Dissipation (Note 2)
Derate Above 25°C
P_D
1000
8
mW
mW/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device is mounted on FR-4 PCB 36×18×1.5 mm, mounting pad for the collector lead minimum 6 cm².
 THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ_JA
RATINGS
125
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1) BV_CEO I_C=1.0mA, I_B=0
80
Emitter Base Breakdown Voltage
BV_EBO I_E=100μA, I_C=0
4
Collector Cutoff Current
I_CES V_CE=60V, I_B=0
Collector Cutoff Current
I_CBO V_CB=80V, I_E=0
ON CHARACTERISTICS
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
h_FE
V_CE=1V , I_C=10mA,
V_CE=1V , I_C=100mA,
100
100
V_CE(SAT) I_C=100mA, I_B=10mA
V_BE(ON) V_CE=1V , I_C=100mA,
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note2)
f_T
V_CE=2V, I_C=10mA, f=100MHz 100
Notes: 1. Pulse test: P_W ≤ 300μs, Duty Cycle ≤ 2%
2. f_T is defined as the frequency at which IhfeI extrapolates to unity.
TYP
MAX UNIT
V
V
0.1 μA
0.1 μA
0.25 V
1.2 V
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R207-031.A