PZT5551_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE SWITCHING TRANSISTOR

PZT5551
NPN SILICON TRANSISTOR
„ ABSOLUATE MAXIUM RATINGS (T_A = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
180
V
Collector-Emitter Voltage
V_CEO
160
V
Emitter-Base Voltage
V_EBO
6
V
DC Collector Current
I_C
600
mA
Power Dissipation
P_C
2
W
Operating Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θ_JA
62.5
„ ELECTRICAL CHARACTERISTICS (T_A= 25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
DC Current Gain (Note)
h_FE
Collector-Emitter Saturation Voltage V_CE(SAT)
Base-Emitter Saturation Voltage
V_BE(SAT)
Current Gain Bandwidth Product
f_T
Output Capacitance
C_ob
Noise Figure
NF
Note: Pulse test: P_W<300μs, Duty Cycle<2%
I_C=100μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CB=120V, I_E=0
V_BE=4V, I_C=0
V_CE=5V, I_C=1mA
V_CE=5V, I_C=10mA
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CE=10V, I_C=10mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
I_C=0.25mA, V_CE=5V
R_S=1kΩ, f=10Hz ~ 15.7kHz
„ CLASSIFICATION OF h_FE
RANK
RANGE
A
80-170
B
150-240
MIN TYP MAX UNIT
180
V
160
V
6
V
50
nA
50
nA
80
80 160 400
80
0.15
V
0.2
1
V
1
100
300 MHz
6.0 pF
8
dB
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-007,E