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PZT5551_12 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE SWITCHING TRANSISTOR | |||
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PZT5551
NPN SILICON TRANSISTOR
 ABSOLUATE MAXIUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PC
2
W
Operating Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
62.5
 ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
DC Current Gain (Note)
hFE
Collector-Emitter Saturation Voltage VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Noise Figure
NF
Note: Pulse test: PW<300μs, Duty Cycle<2%
IC=100μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=120V, IE=0
VBE=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
 CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
MIN TYP MAX UNIT
180
V
160
V
6
V
50
nA
50
nA
80
80 160 400
80
0.15
V
0.2
1
V
1
100
300 MHz
6.0 pF
8
dB
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-007,E
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