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| PZT5551 Datasheet, PDF (2/4 Pages) Weitron Technology – NPN Silicon Planar Epitaxial Transistor | |||
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PZT5551
NPN SILICON TRANSISTOR
 ABSOLUATE MAXIUM RATINGS (Ta = 25â)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
Operating Junction Temperature
Storage Temperature
PC
2
W
TJ
+150
â
TSTG
-65 ~ +150
â
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Thermal Resistance
SYMBOL
θJA
RATINGS
62.5
 ELECTRICAL CHARACTERISTICS (Ta= 25â, unless otherwise specified)
UNIT
â/W
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=100μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=10μA, IC=0
Collector Cut-off Current
ICBO VCB=120V, IE=0
Emitter Cut-off Current
IEBO VBE=4V, Ic=0
DC Current Gain(note)
VCE=5V, Ic=1mA
hFE VCE=5V, Ic=10mA
VCE=5V, Ic=50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT VCE=10V, Ic=10mA, f=100MHz
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Noise Figure
NF
Note: Pulse test: PW<300μs, Duty Cycle<2%
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
 CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
MIN TYP MAX UNIT
180
V
160
V
6
V
50
nA
50
nA
80
80 160 400
80
0.15
V
0.2
1
V
1
100
300 MHz
6.0 pF
8
dB
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-007,D
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