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| PZT5401_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE SWITCHING TRANSISTOR | |||
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PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
 ABSOLUATE MAXIUM RATINGS (TA = 25â, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
RATINGS
-160
-150
-5
-600
2
+150
-40 ~ +150
UNIT
V
V
V
mA
W
â
â
 ELECTRICAL CHARACTERISTICS (TA= 25â, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=100μA, IE=0
Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO IE=10μA, IC=0
Collector Cut-off Current
ICBO VCB=120V, IE=0
Emitter Cut-off Current
IEBO VBE=-3V, IC=0
VCE=-5V, IC=-1mA
DC Current Gain(note)
hFE VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Current Gain Bandwidth Product
fT VCE=-10V, IC=-10mA, f=100MHz
Output Capacitance
COB VCB=-10V, IE=0, f=1MHz
Noise Figure
NF
Note: Pulse test: PW<300μs, Duty Cycle<2%
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
MIN
-160
-150
-5
80
80
80
100
TYP MAX UNIT
V
V
V
-50 nA
-50 nA
400
-0.2
-0.5
V
-1
-1
V
400 MHz
6.0 pF
8
dB
 CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-013.B
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