PZT5401 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE SWITCHING TRANSISTOR

PZT5401
PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Ta = 25Ċ, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature


SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
RATINGS
-160
-150
-5
-600
2
+150
-40 ~ +150
UNIT
V
V
V
mA
W
Ċ
Ċ
ELECTRICAL CHARACTERISTICS (Ta= 25Ċ, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
V_CBO I_C=100µA, I_E=0
Collector-Emitter Breakdown Voltage V_CEO I_C=1mA, I_B=0
Emitter-Base Breakdown Voltage
V_EBO I_E=10µA, I_C=0
Collector Cut-off Current
I_CBO V_CB=120V, I_E=0
Emitter Cut-off Current
I_EBO V_BE=-3V, Ic=0
V_CE=-5V, Ic=-1mA
DC Current Gain(note)
h_FE V_CE=-5V, Ic=-10mA
V_CE=-5V, Ic=-50mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
Current Gain Bandwidth Product
f_T V_CE=-10V, Ic=-10mA, f=100MHz
Output Capacitance
C_ob V_CB=-10V, I_E=0, f=1MHz
Noise Figure
N_F
Note: Pulse test: PW<300µs, Duty Cycle<2%
I_C=-0.25mA, V_CE=-5V
R_S=1kΩ, f=10Hz ~ 15.7kHz
MIN
-160
-150
-6
80
80
80
100
TYP MAX UNIT
V
V
V
-50 nA
-50 nA
400
-0.2
V
-0.5
-1
-1
V
400 MHz
6.0 pF
8
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-013,A