PZT1816 Datasheet, PDF (2/5 Pages) Unisonic Technologies – HIGH CURRENT SWITCHIG APPLICATIONS

PZT1816
NPN PLANAR TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (T_A =25℃ )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
120
V
Collector-Emitter Voltage
V_CEO
100
V
Emitter-Base Voltage
V_EBO
6
V
DC
Collector Current
PULSE(Note 2)
I_C
4
A
8
A
Power Dissipation
Junction Temperature
Storage Temperature
P_D
T_J
T_STG
1
W
+150
°C
-40 ~ +150
°C
Note1: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note2: Duty=1/2, Pw=20ms
„ ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BV_CBO
BV_CEO
BV_EBO
V_BE(SAT)
V_CE(SAT)
I_CBO
I_EBO
h_FE1
h_FE2
f_T
C_ob
t_ON
t_STG
t_F
„ CLASSIFICATION of h_FE1
TEST CONDITIONS
I_C =10μA, I_E =0
I_C =1mA, R_B=∞
I_E =10μA, I_C=0
I_C = 2A, I_B =0.2A
I_C = 2A, I_B=0.2A
V_CB = 100 V, I_E =0
V_EB = 4V, I_C=0
V_CE = 5V, I_C = 0.5A
V_CE =5V, I_C = 3A
V_CE =10V, I_C =0.5A
V_CB =10V, I_E =0A, f =1MHz
See test circuit
See test circuit
See test circuit
MIN TYP MAX UNIT
120
V
100
V
6
V
0.9 1.2 V
150 400 mV
1 μA
1 μA
70
400
40
180
MHz
40
pF
100
ns
900
ns
50
ns
RANK
RANGE
R
100 - 200
S
140 - 280
T
200 - 400
Q
70 -140
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R207-025.A