PN2907A_10 Datasheet, PDF (2/6 Pages) Unisonic Technologies – PNP GENERAL PURPOSE AMPLIFIER

PN2907A
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIUM RATINGS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V_CEO
-60
V
Collector-Base Voltage
V_CBO
-60
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current-Continuous
I_C
-800
mA
Power Dissipation
SOT-89
350
mW
TO-92
P_D
625
mW
Junction Temperature
Storage Temperature
T_J
+150
°C
T_STG
-40 ~ +150
°C
Note: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Thermal resistance, junction to Ambient
SOT-89
TO-92
SYMBOL
θ_JA
RATINGS
104
200
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
UNIT
℃/W
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV_CEO I_C=-10mA, I_B=0
-60
Collector-Base Breakdown Voltage
BV_CBO I_C=-10μA, I_E=0
-60
Emitter-Base Breakdown Voltage
BV_EBO I_E=-10μA , I_C=0
-5
Base Cutoff Current
I_B
V_CB=-30V, V_EB=-0.5V
Collector Cutoff Current
I_CEX V_CE=-30V, V_BE=-0.5V
Collector Cutoff Current
ON CHARACTERISTICS
I_CBO
V_CB=-50V, I_E=0
V_CB=-50V, I_E=0, Ta=150°C
Ic=-0.1mA, V_CE=-10V
75
DC Current Gain
Ic=-1.0 mA, V_CE=-10V
100
h_FE Ic=-10 mA, V_CE=-10V
100
Ic=-150 mA, V_CE=-10V (Note) 100
Ic=-500 mA, V_CE=-10V (Note)
50
Collector-Emitter Saturation Voltage
(Note)
V_CE(SAT)
Ic=-150mA, I_B=-15mA
Ic=-500mA, I_B=-50mA
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
V_BE(SAT)
Ic=-150mA, I_B=-15mA (Note)
Ic=-500mA, I_B=-50mA
Current Gain – Bandwidth Product
f_T
Ic=-50mA, V_CE=-20V, f=100MHz 200
Output Capacitance
C_ob V_CB=-10V, I_E=0, f=100kHz
Input Capacitance
SWITCHING CHARACTERISTICS
C_ib V_EB=-2V, I_C=0, f=100kHz
Turn-on Time
Delay Time
Rise Time
t_ON
Vcc=-30V, Ic=-150mA
t_DLY
t_R
I_B1=-15mA
Turn-off Time
Storage Time
Fall Time
t_{OFF Vcc=-6V, Ic=-150mA}
t_S
I_B1=I_B2=-15mA
t_F
Note: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0%
TYP MAX UNIT
V
V
V
-50 nA
-50 nA
-0.02 μA
-20 μA
300
-0.4 V
-1.6 V
-1.3 V
-2.6 V
MHz
8
pF
30 pF
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-041.D