PN2222A_10 Datasheet, PDF (2/6 Pages) Micro Commercial Components – 625mW NPN General Purpose Amplifier

PN2222A
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_A=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
75
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Base Voltage
V_EBO
6
V
Collector Current
I_C
0.6
A
Total Device Dissipation
Junction Temperature
Storage Temperature
SOT-89
1.2
TO-92
P_C
0.6
W
T_J
+150
℃
T_STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA (T_A=25℃, unless otherwise noted)
Junction to Ambient
PARAMETER
SOT-89
TO-92
SYMBOL
θ_JA
RATINGS
104
200
„ ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)
UNIT
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV_CBO I_C=10μA, I_E=0
75
Collector-Emitter Breakdown Voltage
BV_CEO I_C=10mA, I_B=0
40
Emitter-Base Breakdown Voltage
BV_EBO I_E=10μA, I_C=0
6
Collector Cut-off Current
I_CEO V_CE=60V, V_EB(OFF)=3.0V
Collector Cut-Off Current
I_CBO V_CB=60V, I_E=0
Emitter Cut-Off Current
I_EBO V_EB=3.0V, I_C=0
Base Cut-Off Current
I_BL V_CE=60V, V_EB(OFF)=3.0V
ON CHARACTERISTICS
DC Current Gain
I_C=0.1mA, V_CE=10V
35
I_C=1.0mA, V_CE=10V
50
h_FE
I_C=10mA, V_CE=10V
I_C=150mA, V_CE=10V (Note)
75
100
I_C=150mA, V_CE=1.0V (Note)
50
I_C=500mA, V_CE=10V (Note)
40
Collector-Emitter Saturation Voltage
(Note)
V_CE(SAT) ^{IC=150mA, IB=15mA}
I_C=500mA, I_B=50mA
Base-Emitter Saturation Voltage (Note) _VBE(SAT) ^{IC=150mA, IB=15mA}
0.6
I_C=500mA, I_B=50mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
f_T I_C=20mA, V_CE=20V, f=100MHz 300
Cobo V_CB=10V, I_E=0, f=100kHz
Cibo V_EB=0.5V, I_C=0, f=100kHz
rb'Cc I_C=20mA, V_CB=20V, f=31.8MHz
NF ^{IC=100μA, VCE=10V, RS=1.0kΩ,}
f=1.0kHz
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje) I_C=20mA, V_CB=20V, f=300MHz
TYP
MAX UNIT
V
V
V
10
nA
0.01 μA
10
nA
20
nA
300
0.3
V
1.0
1.2
V
2.0
MHz
8.0 pF
25
pF
150 pS
4.0 dB
60
Ω
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R208-022.D