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| MN2510 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN TRANSISTOR | |||
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MN2510
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
25
A
Base Current
IB
Collector Power Dissipation (TC=25°C)
Pc
5
A
125
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Voltage
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Cut-Off Frequency
Output Capacitance
ï® CLASSIFICATION OF hFE
SYMBOL
TEST CONDITIONS
ICBO VCB=100V
IEBO VEB=6V
V(BR)CEO IC=50mA
hFE VCE=4V, IC=12A
VCE(sat) IC=12A, IB=1.2A
VBE(ON) VCE=4V, IC=12A
fT
VCE=12V, IE=-1A
Cob VCB=10V, IE=0A, f=1MHz
MIN TYP MAX UNIT
10 µA
10 µA
100
V
40
120
1.5 V
1.8 V
20
MHz
200
pF
RANK
hFE1
R
40~80
O
60~120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R214-020.a
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