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| MMDT5401_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate | |||
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MMDT5401
Preliminary
DUAL TRANSISTOR
ï® ABSOLUATE MAXIUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-160
V
Collector -Emitter Voltage
VCEO
-150
V
Emitter -Base Voltage
VEBO
-5
V
DC Collector Current
IC
-600
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (Ta= 25â, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=-100ïA, IE=0
Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO IE=-10ïA, IC=0
Collector Cut-off Current
ICBO VCB=-120V, IE=0
Emitter Cut-off Current
IEBO VBE=-3V, IC =0
VCE=-5V, IC =-1mA
DC Current Gain(note)
hFE VCE=-5V, IC =-10mA
VCE=-5V, IC =-50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Current Gain Bandwidth Product
fT VCE=-10V, IC =-10mA, f=100MHz
Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Noise Figure
NF
Note: Pulse test: PW<300ïs, Duty Cycle<2%
IC=-0.25mA, VCE=-5V
RS=1kï, f=10Hz ~ 15.7kHz
MIN
-160
-150
-5
80
80
80
100
TYP
160
MAX
-50
-50
UNIT
V
V
V
nA
nA
400
-0.2
V
-0.5
-1
V
-1
300 MHz
6.0 pF
8 dB
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-021.c
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