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MMDT3906_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
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MMDT3906
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-40
V
VCEO
-40
V
Emitter-Base Voltage
Collector Current-Continuous
VEBO
-5.0
V
IC
-200
mA
Power Dissipation
Junction Temperature
PD
200
mW
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
625
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF Characteristics (Note)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
VCBO
VCEO
IC=-10A,IE=0
IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO IE=-10A, IC=0
Collector Cutoff Current
ICEX VCE=-30V, VEB=-3V
Base Cutoff Current
IBL
VCE=-30V, VEB=-3V
ON Characteristics (Note)
hFE1 VCE=-1V, IC=-0.1mA
hFE2 VCE=-1V, IC=-1mA
DC Current Gain
hFE3 VCE=-1V, IC=-10mA
hFE4 VCE=-1V, IC=-50mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE5
VCE(SAT)1
VCE(SAT)2
VBE(SAT)1
VBE(SAT)2
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Small Signal Characteristics
Output Capacitance
Current Gain-Bandwidth Product
COB VCB=-5V,IE=0, f=1MHz
fT
VCE=-20V, IC=-10mA, f=100MHz
Switching Characteristics
Turn on Time
tON
VCC=-3V, VBE=-0.5V, IC=-10mA,
IB1=-1mA
Turn off Time
tOFF
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%
IB1=1B2=-1mA
MIN TYP MAX UNIT
-40
V
-40
V
-5
V
-50 nA
-50 nA
60
80
100
60
30
-0.65
300
-0.25 V
-0.4 V
-0.85 V
-0.95 V
4.5 pF
250
MHz
70 ns
300 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-014.d
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