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| MMDT3904_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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MMDT3904
NPN EPITAXIAL SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
60
V
VCEO
40
V
Emitter-Base Voltage
Collector Current - Continuous
VEBO
6.0
V
IC
200
mA
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
θJA
200
mW
625
°C/W
Junction Temperature
Storage Temperature
TJ
+150
°C
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COB VCB = 5.0V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT VCE = 20V, IC = 10mA, f = 100MHz
Turn On Time
tON
VCC=3V,VBE=0.5V,
IC=10mA,IB1=1mA
Turn Off Time
tOFF IB1=1B2=1mA
Note: Pulse test: PW ⤠300μs, Duty Cycle ⤠2.0%.
MIN
60
40
6
40
70
100
60
30
0.65
300
TYP
MAX UNIT
V
V
V
50
nA
50
nA
300
0.20 V
0.30 V
0.85 V
0.95 V
4.0 pF
MHz
70
ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-013.C
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