MMDT3904 Datasheet, PDF (2/3 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMDT3904
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Base Voltage
V_EBO
6.0
V
Collector Current - Continuous
I_C
200
mA
Power Dissipation
P_D
Thermal Resistance, Junction to Ambient
θ_JA
200
mW
625
℃/W
Junction Temperature
T_J
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage V_(BR)CBO I_C = 10μA, I_E = 0
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 1.0mA, I_B = 0
Emitter-Base Breakdown Voltage
V_(BR)EBO I_E = 10μA, I_C = 0
Collector Cut-off Current
I_CEX V_CE = 30V, V_EB(OFF) = 3.0V
Base Cut-off Current
I_BL V_CE = 30V, V_EB(OFF) = 3.0V
ON CHARACTERISTICS (Note 1)
I_C = 100μA, V_CE = 1.0V
DC Current Gain
I_C = 1.0mA, V_CE = 1.0V
h_FE I_C = 10mA, V_CE = 1.0V
I_C = 50mA, V_CE = 1.0V
I_C = 100mA, V_CE = 1.0V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 10mA, I_B = 1.0mA
I_C = 50mA, I_B = 5.0mA
Base- Emitter Saturation Voltage
V_BE(sat)
I_C = 10mA, I_B = 1.0mA
I_C = 50mA, I_B = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C_OBO V_CB = 5.0V, f = 1.0MHz, I_E = 0
Input Capacitance
C_IBO V_EB = 0.5V, f = 1.0MHz, I_C = 0
Input Impedance
h_IE
Voltage Feedback Ratio
Small Signal Current Gain
H_RE VCE = 10V, IC = 1.0mA,
H_FE f = 1.0kHz
Output Admittance
H_OE
Current Gain-Bandwidth Product
f_T
V_CE = 20V, I_C = 10mA,
f = 100MHz
Noise Figure
NF ^{VCE = 5.0V, IC = 100μA,}
R_S = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
T_D V_CC = 3.0V, I_C = 10mA,
T_R VBE(off) = - 0.5V, IB1 = 1.0mA
Storage Time
Fall Time
T_S V_CC = 3.0V, I_C = 10mA,
T_F ^IB1 ^{= I}B2 ^{= 1.0mA}
Note: 1. Short duration test pulse used to minimize self-heating.
MIN
60
40
5.0
40
70
100
60
30
0.65
1.0
0.5
100
1.0
300
TYP
MAX UNIT
V
V
V
50
nA
50
nA
300
0.20
V
0.30
V
0.85
V
0.95
V
4.0
pF
8.0
pF
10
KΩ
8.0 ×10^-4
400
40
μS
MHz
5.0
dB
35
ns
35
ns
200
ns
50
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-013.a