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| MMDT2222A_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor | |||
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MMDT2222A
DUAL TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
75
V
VCEO
40
V
Emitter-Base Voltage
Collector Current-Continuous
VEBO
6.0
V
IC
600
mA
Power Dissipation (Note 2)
Junction Temperature
PD
200
mW
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Maximum combined dissipation.
ï® THERMAL DATA (TA=25°C, unless otherwise specified.)
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
625
ï® ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note)
Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0
75
V
40
V
Emitter-Base Breakdown Voltage
Collector-Current
Collector- Current
V(BR)EBO
ICBO
ICEX
IE=10μA, IC=0
VCB=60V, IE=0
VCB=60V, IE=0, TA=150°C
VCE=60V, VEB(OFF)=3.0V
6.0
V
10 nA
10 μA
10 nA
Emitter- Current
Base- Current
IEBO VEB=3.0V, IC=0
IBL
VCE=60V, VEB(OFF)=3.0V
10 nA
20 nA
ON CHARACTERISTICS (Note)
IC=100µA, VCE=10V
35
IC=1.0mA, VCE=10V
50
IC=10mA, VCE=10V
75
DC Current Gain
hFE IC=150mA, VCE=10V
IC=500mA, VCE=10V
100
300
40
IC=10mA, VCE=10V, TA=-55°C
50
IC=150mA, VCE=1.0V
35
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.3 V
1.0 V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.6
1.2 V
2.0 V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO VCB=10V, f=1.0MHz, IE=0
8 pF
Input Capacitance
Current Gain-Bandwidth Product
CIBO
fT
VEB=0.5V, f=1.0MHz, IC=0
VCE=20V, IC=20mA, f=100MHz
25 pF
300
MHz
Noise Figure
NF VCE=10V, IC=100μA, RS=1.0kâ¦, f=1.0kHz
4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
tD
VCC=30V,IC=150mA,VBE(OFF)=-0.5V,
tR
IB1=15mA
10 ns
25 ns
Storage Time
Fall Time
tS
tF
VCC=30V, IC=150mA, IB1=IB2=15mA
225 ns
60 ns
Note: Short duration pulse test used to minimize self-heating effect.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-016.B
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