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MMDT2222A Datasheet, PDF (2/3 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2222A
Preliminary
DUAL TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current-Continuous
IC
600
mA
Power Dissipation (Note 2)
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Maximum combined dissipation.
„ THERMAL DATA (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
625
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS (Note)
Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0
75
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0
40
Emitter-Base Breakdown Voltage
V(BR)EBO IE=10μA, IC=0
6.0
Collector-Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, TA=150°C
Collector- Current
ICEX VCE=60V, VEB(OFF)=3.0V
Emitter- Current
IEBO VEB=3.0V, IC=0
Base- Current
IBL
VCE=60V, VEB(OFF)=3.0V
ON CHARACTERISTICS (Note)
IC=100µA, VCE=10V
35
IC=1.0mA, VCE=10V
50
IC=10mA, VCE=10V
75
DC Current Gain
hFE IC=150mA, VCE=10V
100
IC=500mA, VCE=10V
40
IC=10mA, VCE=10V, TA=-55°C
50
IC=150mA, VCE=1.0V
35
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.6
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO VCB=10V, f=1.0MHz, IE=0
Input Capacitance
CIBO VEB=0.5V, f=1.0MHz, IC=0
Current Gain-Bandwidth Product
fT
VCE=20V, IC=20mA, f=100MHz
300
Noise Figure
NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
tD
VCC=30V,IC=150mA,VBE(OFF)=-0.5V,
tR
IB1=15mA
Storage Time
Fall Time
tS
tF
VCC=30V, IC=150mA, IB1=IB2=15mA
Note: Short duration pulse test used to minimize self-heating effect.
TYP MAX UNIT
V
V
V
10 nA
10 μA
10 nA
10 nA
20 nA
300
0.3 V
1.0 V
1.2 V
2.0 V
8 pF
25 pF
MHz
4.0 dB
10 ns
25 ns
225 ns
60 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-016.a