MMBTH10_15 Datasheet, PDF (2/5 Pages) Guilin Strong Micro-Electronics Co., Ltd. – SOT-23

MMBTH10
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3
V
SOT-23
225
mW
Power Dissipation
SOT-323/SOT-523
PC
200
mW
SOT-723
150
mW
Collector current
IC
50
mA
Junction Temperature
T_J
150
C
Storage Temperature
T_STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°С unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Current Gain Bandwidth Product
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
ICBO
IEBO
hFE
Cob
fT
TEST CONDITIONS
IC=100µA
IC=1mA
IE=10µA
IC=4mA, IB=400µA
VCE=10V, IC=4mA
VCB=25V
VEB=2V
VCE=10V, IC=4mA
VCB=10V, f=1MHZ
VCE=10V, IC=4mA, f=100MHz
MIN TYP MAX UNIT
30
V
25
V
3
V
500 mV
950 mV
100 nA
100 nA
60
0.7 pF
650
MHz
 CLASSIFICATION OF h_FE
RANK
RANGE
A
60-100
B
90-130
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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