MMBTH10_10 Datasheet, PDF (2/5 Pages) Unisonic Technologies – RF TRANSISTOR

MMBTH10
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3
V
SOT-23
Power Dissipation
SOT-323/SOT-523
PC
225
mW
200
mW
Collector current
IC
50
mA
Junction Temperature
Storage Temperature
T_J
T_STG
150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=100µA
30
V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
25
V
Emitter-Base Breakdown Voltage
BVEBO IE=10µA
3
V
Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400µA
500 mV
Base-Emitter on Voltage
VBE(ON) VCE=10V, IC=4mA
950 mV
Collector Cut-off Current
ICBO VCB=25V
100 nA
Emitter Cut-off Current
IEBO VEB=2V
100 nA
DC Current Gain
hFE VCE=10V, IC=4mA
60
Output Capacitance
Cob VCB=10V, f=1MHZ
0.7
pF
Current Gain Bandwidth Product
fT VCE=10V, IC=4mA, f=100MHz 650
MHz
„ CLASSIFICATION OF h_FE
RANK
RANGE
A
60-100
B
90-130
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-003.F