MMBTA94 Datasheet, PDF (2/3 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

MMBTA94
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
Collector Dissipation (Ta=25°C)
VEBO
-6
V
PC
350
mW
Collector Current
Junction Temperature
IC
-300
mA
TJ
+150
°C
Storage Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO Ic=-100µA,IE=0
Collector-Emitter Breakdown Voltage BVCEO Ic=-1mA,IB=0
Collector-Emitter Breakdown Voltage BVCES Ic=-100µA,VBE=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100µA,Ic=0
Collector Cut-off Current
ICBO VCB=-300V,IE=0
Collector Cut-off Current
ICES VCB=-400V,VBE=0
Emitter Cut-off Current
IEBO VEB=-4V,IC=0
DC Current Gain (note)
VCE=-10V,IC=-1mA
hFE
VCE=-10V,IC=-10mA
VCE=-10V,IC=-50mA
VCE=-10V,IC=-100mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-10mA,IB=-1mA
Output Capacitance
Cob VCB=-20V,IE=0, f=1MHz
Note: Pulse test: PW<300µs, Duty Cycle<2%
MIN
-400
-400
-400
-5
60
70
70
40
TYP
MAX UNIT
V
V
V
V
-100 nA
-1 µA
100 nA
300
-0.20
-0.5 ^V
-0.75 V
7 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-008,B