 English |
|
|
|
|
|
|
|
| MMBTA92_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors | |||
| |||
| ◁ |
MMBTA92
PNP SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-300
V
VCEO
-300
V
Emitter-Base Voltage
Collector Current
VEBO
IC
-5
V
-500
mA
TA=25°C
Collector Dissipation TC=25°C
PC
350
mW
1.5
W
Derate Above Ta >25°C
12
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO IC=-100μA, IE=0
BVCEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVEBO IE=-100μA, IC=0
ICBO VCB=-200V, IE=0
Emitter Cut-Off Current
IEBO VEB=-3V, IC=0
VCE=-10V, IC=-1mA
DC Current Gain (Note)
hFE VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)1 IC=-20mA, IB=-2mA
VBE(SAT)1 IC=-20mA, IB=-2mA
Current Gain Bandwidth Product
fT VCE=-20V, IC=-10mA, f=100MHz
Collector Base Capacitance
Ccb VCB=-20V, IE=0, f=1MHz
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE(SAT)1<200mV (Class SIN)
MIN
-300
-300
-5
60
80
80
50
TYP MAX UNIT
V
V
V
-0.25 μA
-0.10 μA
-0.5 V
-0.90 V
MHz
6 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-005.E
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese