MMBTA92_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – HIGH VOLTAGE PNP TRANSISTOR

MMBTA92
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Ta=25°C
V_CBO
V_CEO
V_EBO
I_C
-300
V
-300
V
-5
V
-500
mA
350
mW
Collector Dissipation TC=25°C
P_C
Derate Above Ta >25°C
1.5
W
12
mW/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV_CBO I_C=-100μA, I_E=0
Collector-Emitter Breakdown Voltage
BV_CEO I_C=-1mA, I_B=0
Emitter-Base Breakdown Voltage
BV_EBO I_E=-100μA, I_C=0
Collector Cut-Off Current
I_CBO V_CB=-200V, I_E=0
Emitter Cut-Off Current
I_EBO V_EB=-3V, I_C=0
DC Current Gain (Note)
V_CE=-10V, I_C=-1mA
h_FE V_CE=-10V, I_C=-10mA
V_CE=-10V, I_C=-30mA
Collector-Emitter Saturation Voltage
V_CE(SAT)1 I_C=-20mA, I_B=-2mA
Base-Emitter Saturation Voltage
V_BE(SAT)1 I_C=-20mA, I_B=-2mA
Current Gain Bandwidth Product
f_T V_CE=-20V, I_C=-10mA, f=100MHz
Collector Base Capacitance
C_cb V_CB=-20V, I_E=0, f=1MHz
Note: Pulse test: PW<300μs, Duty Cycle<2%, V_CE(SAT)1<200mV (Class SIN)
MIN
-300
-300
-5
60
80
80
50
TYP MAX UNIT
V
V
V
-0.25 μA
-0.10 μA
-0.5 V
-0.90 V
MHz
6 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-005,D