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| MMBTA55 Datasheet, PDF (2/3 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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MMBTA55
Preliminary
AMPLIFIER TRANSISTOR
ï® ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
Collector-emitter voltage
VCBO
60
V
VCEO
60
V
Emitter-base voltage
Collector current - Continuous
VEBO
IC
4
V
500
mA
Total device dissipation
TA=25°C
Derate above 25°C
PD
350
mW
2.8
mW/°C
Junction Temperature
Storage Temperature
TJ
125
°C
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
357
Note: Rï±JA is measured with the device soldered into a typical printed circuit board.
ï® ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-emitter breakdown voltage (note 1)
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC=1.0mA, IB=0
IE=100ïA, Ic=0
Collector cutoff current
Collector cutoff current
ICES
VCE=60V, IB=0
ICBO
VCB=60V, IE=0
ON CHARACTERISTICS
DC current gain
Collector-emitter saturation voltage
hFE
VCE(SAT)
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=100mA, IB=10mA
Base-emitter on voltage
VBE(ON) IC=100mA, VCE=1V
SMALL-SIGNAL CHARACTERISTICS
Current gain bandwidth product (note 2)
fT
IC=100mA, VCE=1V,
f=100MHz
Note 1. Pulse test: PW<=300ïs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
MIN
TYP
MAX
UNI
T
60
V
4
V
0.1 μA
0.1 μA
100
100
0.25 V
1.2 V
50
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-104.b
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