MMBTA45_15 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

MMBTA44/45
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MMBTA44
MMBTA45
VCBO
500
400
V
V
Collector-Emitter Voltage
MMBTA44
MMBTA45
VCEO
400
350
V
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Power Dissipation
TA=25°C
TC=25°C
PD
350
mW
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_J =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown MMBTA44
Voltage
MMBTA45
Collector-Emitter Breakdown MMBTA44
Voltage
MMBTA45
Emitter-Base Breakdown Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Collector Cut-off Current
MMBTA44
MMBTA45
Collector Cut-off Current
MMBTA44
MMBTA45
Emitter Cut-off Current
DC Current Gain (Note)
VBE(SAT)
ICBO
ICES
IEBO
hFE1
h_FE2
h_FE3
h_FE4
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note: Pulse test: PW<300μs, Duty Cycle<2%
TEST CONDITIONS
IC=100μA, IB=0
IC =1mA, IB=0
IE=100μA, IC =0
IC =1mA, IB=0.1mA
IC =10mA, IB=1mA
IC =50mA, IB=5mA
IC 10mA, IB=1mA
VCB=400V, IE =0
VCB=320V, IE =0
VCE =400V, IB=0
VCE =320V, IB=0
VEB=4V, IC =0
VCE =10V, IC =1mA
VCE =10V, IC =10mA
VCE =10V, IC =50mA
VCE =10V, IC =100mA
VCE =20V, IC =10mA
f=100MHz
VCB=20V, IE =0, f=1MHz
MIN TYP MAX UNIT
500
V
400
V
400
V
350
V
6
V
0.4
V
0.5
V
0.75 V
0.75 V
0.1 μA
0.1 μA
0.5 μA
0.5 μA
0.1 μA
40
50
240
45
40
50
MHz
7
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-007.F