MMBTA44 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – SOT-23-3L Plastic-Encapsulate Transistors

MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
MMBTA44
MMBTA45
Collector-Emitter Voltage
MMBTA44
MMBTA45
Emitter-Base Voltage
Collector Current
Power Dissipation
Ta=25°C
Tc=25°C
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
Ic
PD
TJ
TSTG
RATINGS
500
400
400
350
6
300
350
1.5
+150
-40 ~ +150
UNIT
V
V
V
mA
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (T_j =25°C, unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS MIN
Collector-Base Breakdown MMBTA44
Voltage
MMBTA45
BVCBO Ic=100µA, IB=0
500
400
Collector-Emitter Breakdown MMBTA44
Voltage
MMBTA45
BVCEO Ic=1mA, IB=0
400
350
Emitter-Base Breakdown Voltage
BVEBO IE=100µA, Ic=0
6
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=1mA, IB=0.1mA
Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(sat) Ic=10mA, IB=1mA
Collector Cut-off Current
MMBTA44
MMBTA45
ICBO
VCB=400V, IE =0
VCB=320V, IE =0
Collector Cut-off Current
MMBTA44
MMBTA45
ICES
VCE =400V, IB=0
VCE =320V, IB=0
Emitter Cut-off Current
IEBO
VEB=4V, Ic=0
DC Current Gain(Note)
VCE =10V, Ic=1mA
40
hFE
VCE =10V, Ic=10mA
VCE =10V, Ic=50mA
50
45
VCE =10V, Ic=100mA
40
Current Gain Bandwidth Product
fT
VCE =20V, Ic=10mA
f=100MHz
50
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
Note: Pulse test: PW<300µs, Duty Cycle<2%
TYP MAX
0.4
0.5
0.75
0.75
0.1
0.1
0.5
0.5
0.1
240
7
UNIT
V
V
V
V
V
µA
µA
µA
MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-007.B