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| MMBTA14_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – DARLINGTON TRANSISTOR | |||
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MMBTA14
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCES
30
V
30
V
Emitter-Base Voltage
Collector Dissipation (TC=25ï°C)
VEBO
PC
10
V
350
mW
Collector Current
Junction Temperature
IC
500
mA
TJ
+150
ï°C
Storage Temperature
TSTG
-40 ~ +150
ï°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Emitter Breakdown Voltage
Collector CutOff Current
BVCES
ICBO
Emitter CutOff Current
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
VCE(SAT)
VBE(ON)
Current Gain Bandwidth Product
fT
Note: Pulse Width < 300µs, Duty Cycle ⤠2%
TEST CONDITIONS
IC=100µA, IB=0
VCB=30V, IE=0
VEB=10V, IC=0
VCE=5V, IC=100 mA (Note)
IC=100mA, IB=0.1mA (Note)
VCE=5V, IC=100mA (Note)
VCE=5V, IC=10mA, f=100MHz
MIN TYP
30
20000
125
MAX UNIT
V
100 nA
100 nA
1.5 V
2.0 V
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-038.D
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