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| MMBT4403_10 Datasheet, PDF (2/5 Pages) Unisonic Technologies – PNP GENERAL PURPOSE AMPLIFIER | |||
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MMBT4403
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current-Continuous
IC
-600
mA
Total Device Dissipation
Derate above 25°C
350
mW
PC
2.8
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
 THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
Junction to Ambient
SYMBOL
θJA
RATINGS
357
 ELECTRICAL CHARACTERISTICS (Ta=25â, unless otherwise specified)
UNIT
°C /W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
BVCEO IC=-1mA, IB=0
Collector-Base Breakdown Voltage BVCBO IC=-0.1mA, IE=0
Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA, IC=0
Collector Cut-off Current
ICEX VCE=-35V, VEB=-0.4V
Base Cut-off Current
IBEX VCE=-35V, VBE=-0.4V
ON CHARACTERISTICS*
hFE1 VCE=-1V,IC=-0.1mA
DC Current Gain
hFE2
hFE3
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
hFE4 VCE=-2V, IC=-150mA (Note)
hFE5 VCE=-2V, IC=-500mA (Note)
Collector-Emitter Saturation
Voltage
VCE(SAT1) IC=-150mA, IB=-15mA
VCE(SAT2) IC=-500mA, IB=-50mA
Base-Emitter Saturation Voltage
VBE(SAT1) IC=-150mA, IB=-15mA(Note)
VBE(SAT2) IC=-500mA, IB=-50mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT VCE=-10V, IC=-20mA, f=100MHz
Collector-Base Capacitance
CCB VCB=-10V, IE=0, f=140kHz
Emitter-Base Capacitance
CEB VBE=-0.5V, IC=0, f=140kHz
Input Impedance
hIE VCE=-10V, IC=-1mA, f=1kHz
Voltage Feedback Ratio
hRE VCE=-10V, IC=-1mA, f=1kHz
Small-Signal Current Gain
hFE VCE=-10V, IC=-1mA, f=1kHz
Output Admittance
hOE VCE=-10V, IC=-1mA, f=1kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
tD
tR
VCC=-30V, IC=-150mA IB1=-15mA
Storage Time
tS VCC=-30V, IC=-150mA
Fall Time
tF IB1= IB2=-15mA
Note: Pulse test: Pulse Widthâ¤300μs, Duty Cycleâ¤2%
MIN
-40
-40
-5
30
60
100
100
20
-0.75
200
1.5
0.1
60
1.0
TYP
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
300
-0.4
V
-0.75
-0.95
-1.3
V
MHz
8.5
pF
30
pF
15
kâ¦
8
Ã10-4
500
100 µmbos
15
ns
20
225
ns
30
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-034.F
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