MJE3055T_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR

MJE3055T
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
70
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Total Power Dissipation
TO-220
TO-251/TO-252
PD
75
W
20
W
Collector Current
IC
10
A
Base Current
IB
6
A
Junction Temperature
T_J
150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCEO IC=200mA
Collector-Base Breakdown Voltage
BVCBO IC=10mA
Emitter-Base Breakdown Voltage
BVEBO IE=10mA
ICBO VCB=70V
Collector Cut-off Current
ICEO VCE=30V
ICEX
VCE=70V, VEB(OFF)=1.5V
Emitter Cut-off Current
IEBO
VEB=5V
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)1 IC=4A, IB=0.4A
VCE(SAT)2 IC=10A, IB=3.3A
Base-Emitter on Voltage
VBE(ON) VCE=4V, IC=4A
DC Current Gain (Note)
hFE1
hFE2
VCE=4V , IC=4A
VCE=4V , IC=10A
Current Gain Bandwidth Product
fT
VCE=10V, IC=0.5A, f=1MHz
Note: Pulse test: P_W ≤ 300μs, duty cycle ≤ 2%.
MIN TYP MAX UNIT
60
V
70
V
5
V
1 mA
700 μA
1 mA
5 mA
1.1 V
8
V
1.8 V
20
100
5
2
MHZ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-011.D