MJE13011_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T_C = 25Ċ)

PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_CEO(SUS)
V_EBO
I_C
I_B
P_D
T_J
T_STG
RATINGS
450
400
400
7
10
3
80
+150
-40 ~ +150
UNIT
V
V
V
V
A
A
W
Ċ

Ċ

ELECTRICAL SPECIFICATIONS (T_C =25Â¥, Unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Voltage
V_CBO I_CBO=1mA
450
Collector Emitter Voltage
V_CEO I_CEO=10mA
400
V_{CEO (SUS)} I_C=1A
400
Emitter Base Voltage
V_EBO I_EBO=0.1mA
7
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
V_{CE (SAT)}
V_{BE (SAT)}
I_C=4A, I_B=0.8A
Collector Cut-off Current
I_CBO V_CBO=450V
Emitter Cut-off Current
I_EBO
V_EBO=7V
DC Current Gain
h_FE I_C=4A, V_CE=5V
10
Switching Time
t_ON
t_STG
I_C=7.5A, I_B1=-I_B2=1.5A
R_L=20Ω, Pw=20µs, Duty ≤ 2%
t_F
TYP
MAX
1.2
1.5
1.0
0.1
UNIT
V
V
V
V
V
V
mA
mA
1.0 µs
2.0 µs
1.0 µs
CLASSIFICATION of h_FE
RANK
RANGE
A
10 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Case

SYMBOL
ǀ_JC
RATINGS
1.55
UNIT
Â¥/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-010,B