MJE13003-P Datasheet, PDF (2/8 Pages) Unisonic Technologies – NPN SILICON POWER TRANSISTOR

MJE13003-P
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
V_CEO(SUS)
400
V
Collector-Base Voltage
V_CBO
700
V
Emitter Base Voltage
V_EBO
9
V
Collector Current
Continuous
I_C
1.5
A
Peak (1)
I_CM
3
Base Current
Continuous
I_B
0.75
A
Peak (1)
I_BM
1.5
Emitter Current
Continuous
I_E
2.25
A
Peak (1)
I_EM
4.5
TO-126 / TO-126C
1.4
W
Total Power Dissipation (T_C=25°C)
TO-92 / TO-92L
P_D
1.1
W
TO-251/ TO-252
25
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R204-027.A