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MGBR5U45_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – MOS GATED BARRIER RECTIFIER
MGBR5U45
DIODE
 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM
45
V
Working Peak Reverse Voltage
Repetitive Peak Reverse Voltage
VRWM
45
V
VRRM
45
V
RMS Reverse Voltage
VR(RMS)
35
V
Average Rectified Output Current
TC=140°C
IO
5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
200
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
DO-201AD
SMC
SYMBOL
θJA
θJC
RATINGS
75
15
35
 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified.)
UNIT
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Reverse Breakdown Voltage (Note 1)
V(BR)R IR=0.5mA
Instantaneous Forward Voltage
VFM
IF=5A, TJ=25°C
IF=5A, TJ=125°C
Leakage Current (Note 1)
IRM
VR=45V, TJ=25°C
VR=45V, TJ=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
MIN TYP MAX UNIT
45
V
0.43 V
0.40 V
500 μA
100 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-208.D