MGBR40S60C Datasheet, PDF (2/3 Pages) Unisonic Technologies – DUAL MOS GATED BARRIER RECTIFIER

MGBR40S60C
Preliminary
DIODE
 ABSOLUTE MAXIMUM RATINGS (PER LEG) (T_A=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
Working Peak Reverse Voltage
V_RM
60
V
V_RWM
60
V
Peak Repetitive Reverse Voltage
V_RRM
60
V
Average Rectified Output Current Per Device
Per Leg
Total
I_O
20
A
40
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
I_FSM
360
A
Operating Junction Temperature
Storage Temperature
T_J
-65~+150
°C
T_STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS (PER LEG)
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
2
 ELECTRICAL CHARACTERISTICS (PER LEG) (T_A =25°C unless otherwise specified.)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Reverse Breakdown Voltage (Note 1)
Forward Voltage Drop
V_(BR)R
V_FM
I_R=0.50mA
I_F=20A, T_J=25°C
I_F=20A, T_J=125°C
Leakage Current (Note 1)
I_RM
V_R=60V, T_J=25°C
V_R=60V, T_J=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
MIN TYP MAX UNIT
60
V
0.55 V
0.50 V
500 μA
100 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-175.a