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| MBR760 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier | |||
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MBR760
Preliminary
DIODE
ï® ABSOLUTE MAXIMUM RATINGS (TA=+25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
Working Peak Reverse Voltage
VR
60
V
VRWM
60
V
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
VRRM
60
V
VR(RMS)
42
V
Average Rectified Output Current e(Note 1) TC=+125°C
IO
7.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Voltage Rate of Change (Rated VR)
Operating Temperature
dV/dt
TJ
10000
-65~+150
V/us
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL CHARACTERISTICS
PARAMETER
Junction to Case (Note 1)
SYMBOL
θJC
RATINGS
3.5
ï® ELECTRICAL CHARACTERISTICS (TA =+25°C unless otherwise specified.)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage Drop
VFM
IF=7.5A, TC=25°C
IF=7.5A, TC=125°C
Peak Reverse Current at Rated DC Blocking
Voltage
IRM
TC=25°C
TC=125°C
Junction Capacitance (Note 2)
CJ
Notes: 1. Thermal resistance junction to case mounted on heatsink
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC
MIN TYP MAX UNIT
0.72 V
0.67 V
1.0 mA
50 mA
400
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R202-030.a
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