MBR2100 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SCHOTTKY DIE SPECIFICATION

MBR2100
Preliminary
DIODE
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V_RM
100
V
Working Peak Reverse Voltage
Repetitive Peak Reverse Voltage
V_RWM
100
V
V_RRM
100
V
Average Rectified Output Current
I_O
2.0
A
Non-Repetitive Peak Forward Surge Current: 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I_FSM
40
A
Operating Junction Temperature
T_J
-65~+150
°C
Storage Temperature
T_STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θ_JA
RATINGS
625
 ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage Drop (Note 3)
V_F
I_F=2.0A T_J=25°C
I_F=2.0A, T_J=125°C
Peak Reverse Current at Rated DC
Blocking Voltage
I_R
T_J=25°C, V_R=100V
T_J=125°C, V_R=100V
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Minimum Pad Area.
3. Pulse test: 300μs pulse width, duty cycle 2%.
MIN TYP MAX UNIT
0.79 V
0.69 V
100 μA
10 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R202-051.a