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| K4059 Datasheet, PDF (2/3 Pages) Unisonic Technologies – FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE | |||
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K4059
Preliminary
N-CHANNEL JFET
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Drain Voltage
Gate-Current
VGDO
IG
-20
V
10
mA
Drain Power Dissipation (TA=25°C)
PD
Junction Temperature
TJ
100
mW
125
°C
Storage Temperature Range
TSTG
-55~125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Drain Current
SYMBOL
IDSS
Drain Current
Gate-Drain Voltage
Gate-Source Cut-Off Voltage
Forward Transfer Admittance
Input Capacitance
Voltage Gain
Delta Voltage Gain
Delta Voltage Gain
ID
V(BR)GDO
VGS (OFF)
|Yfs|
CISS
GV
âGV(f)
âGV(V)
Noise Voltage
VN
Total Harmonic Distortion
THD
Time Output Stability
tOS
ï® CLASSIFICATION OF IDSS
RANK
RANGE
A
140-240
TEST CONDITIONS
K4059-A
VGS=0, VDS=2V
K4059-B
K4059-C
VDD=2V, RL=2.2kâ¦,
Cg=5pF
K4059-A
K4059-B
K4059-C
IG=-10µA
VDS=2V, ID=1µA
VDS=2V, VGS=0V
VDS=2V, VGS=0, f=1MHz
VDD=2V,RL=2.2kâ¦,
Cg=5pF, f=1kHz,
VIN=100mV
K4059-A
K4059-B
K4059-C
VDD=2V, RL=2.2kâ¦, Cg=5pF,
f=1kHz~100Hz, VIN=100mV
VDD=2V~1.5V,RL=2.2kâ¦, K4059-A
Cg=5pF, f=1kHz,
K4059-B
VIN=100mV
K4059-C
VDD=2V, RL=1kâ¦,
Cg=10pF, GV=80dB,
A-Curve Filter
K4059-A
K4059-B
K4059-C
VDD=2V, RL=2.2kâ¦,
Cg=5pF, f=1kHz,
VIN =50mV
K4059-A
K4059-B
K4059-C
VDD=2V, RL=2.2kâ¦, Cg=5pF
B
210-350
MIN TYP MAX UNIT
140
240 µA
210
350 µA
320
500 µA
125
260 µA
190
370 µA
290
500 µA
-20
V
-0.1
-1.0 V
1.35 1.85
mS
4.0
pF
-1.2 +0.9
dB
-0.2 +1.4
dB
+0.5 +1.8
dB
0 -1 dB
-0.6 -1.1 dB
-0.8 -1.7 dB
-1.4 -3.2 dB
33 75 mV
38 80 mV
42 90 mV
1.3
%
0.6
%
0.1
%
100 200 ms
C
320-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R228-001.a
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