K1875 Datasheet, PDF (2/3 Pages) Unisonic Technologies – FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

K1875
Preliminary
JFET
„ ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Drain Voltage
V_GDS
-20
V
Gate-Current
I_G
10
mA
Drain Power Dissipation
P_D
100
mW
Junction Temperature
T_J
125
°C
Storage Temperature Range
T_STG
-55~125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A =25°C, unless otherwise specified)
PARAMETER
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-Off Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
„ CLASSIFICATION OF I_DSS
SYMBOL
I_GSS
V_(BR)GDS
I_DSS
V_GS (OFF)
|Y_fs|
C_iss
C_rss
TEST CONDITIONS
V_GS=-15V, V_DS=0V
V_DS=0V, I_G=-100µA
V_DS=5V, V_GS=0V
V_DS=5V, I_D=1µA
V_DS=5V, V_GS=0V, f=1kHz
V_DS=5V, V_GS=0V, f=1MHz
V_DG=5V, I_D=0V, f=1MHz
MIN TYP MAX UNIT
-1.0 nA
-20
V
6
32 mA
-2.5 V
15 25
mS
7.5 10 pF
2 3 pF
RANK
RANGE
GR
6~12
BL
10~20
V
16~32
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-103.a