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| HE8050_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | |||
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HE8050
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA = 25ï°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
40
V
VCEO
25
V
Emitter-Base Voltage
SOT-23
VEBO
6
V
350
mW
Collector Dissipation
SOT-89
PC
500
mW
TO-92/TO-92NL
1
W
Collector Current
Junction Temperature
IC
1.5
A
TJ
+150
ï°C
Storage Temperature
TSTG
-65 ~ +150
ï°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
SOT-23
Junction to Case
SOT-89
TO-92
TO-92NL
SYMBOL
θJC
RATINGS
110
40
80
78
UNIT
°C/W
ï® ELECTRICAL CHARACTERISTICS (TA = 25ï°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
ï® CLASSIFICATION of hFE2
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
Cob
TEST CONDITIONS
IC=100ïA, IE=0
IC=2mA, IB=0
IE=100μA, IC=0
VCB=35V, IE=0
VEB=6V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40
V
25
V
6
V
100 nA
100 nA
45 135
85 160 500
40 110
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
RANK
RANGE
C
120-200
D
160-300
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-018.G
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