HE8050-TO-92 Datasheet, PDF (2/2 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
C
RANGE
120-200
D
160-300
TYPICAL PERFORMANCE CHARACTERISTICS
E
250-500
Fig.1 Static characteristics
0.5
IB=3.0mA
IB=2.5mA
0.4
IB=2.0mA
0.3
IB=1.5mA
0.2
IB=1.0mA
0.1
IB=0.5mA
0
0
0.4
0.8
1.2
1.6
2.0
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
104
Ic=10*IB
VBE(sat)
103
Fig.2 DC current Gain
103
VCE=1V
102
101
0
10
10-1
100
101
102
103
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
103
VCE=10V
102
Fig.3 Base-Emitter on Voltage
103
VCE=1V
102
101
0
10
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emitter voltage (V)
Fig.6 Collector output
Capacitance
103
f=1MHz
102
IE=0
102
VCE(sat)
101
10-1
100
101
102
103
Ic,Collector current (mA)
101
100
100
101
102
103
Ic,Collector current (mA)
101
100
100
101
102
103
Collector-Base voltage (V)
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QW-R201-009,A