DTA114T_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Digital Transistors

DTA114T
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
V_CBO
-50
V
Collector-Emitter Voltage
Emitter-Base Voltage
V_CEO
V_EBO
-50
V
-5
V
Collector Current
I_C
SOT-23
-100
mA
200
Collector Power Dissipation
SOT-323/SOT-523
TO-92
P_C
150
625
mW
TO-92SP
550
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV_CBO I_C=-50μA
-50
Collector-Emitter Breakdown Voltage BV_CEO I_C=-1mA
-50
Emitter-Base Breakdown Voltage
BV_EBO I_E=-50μA
-5
Collector-Emitter Saturation Voltage
V_CE(SAT) I_C=-10mA, I_B=-1mA
Collector Cutoff Current
I_CBO V_CB=-50V
Emitter Cutoff Current
I_EBO
V_EB=-4V
ON CHARACTERISTICS
DC Current Gain
h_FE
V_CE=-5V, I_C=-1mA
100
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R₁
Transition Frequency
f_T
Note: Transition frequency of the device
7
V_CE=-10V, I_E=5mA,f=100MHz (Note)
TYP
250
10
250
MAX UNIT
V
V
V
-0.3 V
-0.5 μA
-0.5 μA
600
13 kΩ
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-061.D