DTA114T Datasheet, PDF (2/3 Pages) Unisonic Technologies – DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

DTA114T
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
V_CBO
-50
V
Collector-Emitter Voltage
V_CEO
-50
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-100
mA
Collector Power Dissipation
SOT-23
SOT-323/SOT-523
P_C
200
mW
150
mW
Junction Temperature
Storage Temperature
T_J
+150
℃
T_STG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Input Resistance
Transition Frequency
* Transition frequency of the device
SYMBOL
TEST CONDITIONS
BV_CBO I_C=-50μA
BV_CEO I_C=-1mA
BV_EBO I_E=-50μA
V_CE(SAT) I_C=-10mA, I_B=-1mA
I_CBO V_CB=-50V
I_EBO V_EB=-4V
h_FE V_CE=-5V, I_C=-1mA
R₁
f_T V_CE=-10V, I_E=5mA, f=100MHz*
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.3 V
-0.5 μA
-0.5 μA
100 250 600
7 10 13 kΩ
250
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-061,B