 English |
|
|
|
|
|
|
|
| DTA114E_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – DIGITAL TRANSISTOR | |||
| |||
| ◁ |
DTA114E
PNP SILICON TRANSISTOR
ï® ABSOLUATE MAXIUM RATINGS (TA= 25â, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Input Voltage
VCC
-50
V
VIN
-40 ~ +10
V
Output Current
SOT-523
IOUT(MAX)
-100
mA
150
mW
Power Dissipation
SOT-23/SOT-323
TO-92
PD
200
mW
625
mW
TO-92SP
550
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA= 25â, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Input Voltage
VIN(OFF) VCC= -5V, IOUT= -100μA
VIN(ON) VOUT= -0.3V, IOUT= -10mA
-3
Output Voltage
VOUT(ON) IOUT/IIN= -10mA/-0.5mA
Input Current
IIN
VIN= -5V
Output Current
IOUT(OFF) VCC= -50V , VIN=0V
-0.5
V
-0.3
V
-0.88 mA
-0.5
µA
ON CHARACTERISTICS
DC Current Gain
hFE
VOUT= -5V, IOUT= -5mA
30
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
7
10
13
kâ¦
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE= -10 V, IE=5mA, f=100MHz
250
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-046.F
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese